215th ECS Meeting - San Francisco, CA

May 24 - May 29, 2009

PROGRAM INFORMATION
 

H10 - First International Symposium on Graphene and Emerging Materials for Post-CMOS Applications

Dielectric Science and Technology/Electronics and Photonics/Fullerenes, Nanotubes, and Carbon Nanostructures
 

Monday, May 25, 2009

Taylor A, 6th Floor, Building 3

Plenary Session

Co-Chairs: Y. Obeng, S. De-Gendt, P. Srinivasan, D. Misra, H. Iwai, Z. Karim, J. Ruzillo, H. Grebel, P. V. Kamat, and F. D?Souza
TimeAbs#Title and Authors
10:00 Introductory Remarks (5 Minutes)
10:05   1290   Graphene: The Magic of Flat Carbon K. S. Novoselov (University of Manchester)
10:45   1291   Multifunctional Complex Oxides for Post-CMOS Applications J. Hoffman, C. A. Vaz (Yale University), H. Molegraaf, J. Triscone (University of Geneve) and C. H. Ahn (Yale University)
11:25   1292   Ge/III-V Channel Engineering for Future CMOS S. Takagi, M. Sugiyama (The University of Tokyo), T. Yasuda (National Institute of Advanced Industrial Science and Technology) and M. Takenaka (The University of Tokyo)
12:05 Intermission (55 Minutes)
13:00 Intermission (30 Minutes)
 

Graphene Physics

Co-Chairs: S. De-Gendt, and P. Srinivasan
TimeAbs#Title and Authors
13:30   1293   Pseudospins in Single and Multilayer Graphene A. H. MacDonald (University of Texas at Austin)
14:00   1294   Development of Scalable Graphene RF Field-Effect Transistors J. Moon, D. Curtis, M. Hu, D. Wong, C. McGuire (HRL Laboratories), P. Campbell (The Naval Research Laboratory), D. K. Gaskill (Naval Research Laboratory), J. Robinson, M. Fanton (The Pennsylvania State University) and P. Asbeck (UCSD)
14:30   1295   Synthesis, Characterization, and Properties of Large-area Few-layer Graphene Films with Tunable Thickness X. Li, W. Cai, I. Jung, J. An, D. Yang, A. Velamakanni, R. Piner (The University of Texas at Austin), L. Colombo (Texas Instruments, Inc.) and R. S. Ruoff (The University of Texas at Austin)
15:00   1296   Free-Standing Graphene and its Applications A. Banerjee and H. Grebel (New Jersey Institute of Technology)
15:30 Intermission (20 Minutes)
 

Characterization of Graphene

Co-Chairs: D. Misra and H. Iwai
TimeAbs#Title and Authors
15:50   1297   Optical and Conductivity Properties of Graphene from Liquid-phase Exfoliation of Natural Graphite J. Obrzut (National Institute of Standards and Technology)
16:20   1298   Defectivity evolution in electron-irradiated mono and bi-layer graphene G. Rao, S. McTaggart, R. Geer and J. Lee (University at Albany)
16:40   1299   Large Scale Graphene Synthesized on Metal and Transferred to Insulators: Material and Electronic Properties Y. P. Chen (Purdue University), Q. Yu (University of Houston), H. Cao, D. Pandey (Purdue University), J. Lian (Rensselaer Polytechnic Institute), I. Childres, V. Drachev, D. Zemlianov, R. Reifenberger (Purdue University), H. Li (University of Missouri) and S. Pei (University of Houston)
17:00 Discussion (5 Minutes)
17:05   1300   HRTEM Observation of Mechanically Exfoliated Graphene from Natural Graphite and HOPG S. Park, Y. Suh, H. Floresca and M. Kim (University of Texas at Dallas)
17:25   1301   Effect of Surface Adsorbates on Graphene Probed by Hall-Effect and Raman Spectroscopy B. Claflin (Wright State University), J. Park, K. Eyink, D. Tomich (Materials and Manufacturing Directorate, AFRL/RX, WPAFB, OH 45433) and J. Albrecht (Sensors Directorate, AFRL/RY, WPAFB, Dayton, OH 45433)
17:45 Discussion (15 Minutes)
 

Tuesday, May 26, 2009

Taylor A/B, 6th Floor, Building 3

Epitaxial Graphene Electronics

Co-Chairs: J. Ruzillo and F. D?Souza
TimeAbs#Title and Authors
08:30   1302   Epitaxial Graphene: Designing a New Electronics Material W. A. De Heer (Georgia institute of Technology)
09:00   1303   Graphene Landau Quantization in Multilayer Epitaxial Graphene G. M. Rutter (NIST)
09:30   1304   Large-Area Epitaxial Graphene: Effect of Strain and Thickness on Electronic Properties J. Robinson, M. Fanton, T. Stitt, T. Stitt, E. Frantz, D. Snyder (The Pennsylvania State University), J. L. Tedesco, B. VanMil (United States Naval Research Laboratory), G. Jernigan, P. Campbell (The Naval Research Laboratory), R. L. Myers-Ward (United States Naval Research Laboratory), C. Eddy Jr. (The Naval Research Laboratory) and D. K. Gaskill (Naval Research Laboratory)
09:50   1305   Large-grained and Highly-ordered Graphene Synthesized by Radio Frequency Plasma-enhanced Chemical Vapor Deposition Y. Woo, D. Kim, D. Jeon, H. Chung, S. Shin, H. Lee, Y. Kwon (Samsung electronics), D. Seo (Stanford univertisy) and S. Seo (Samsung electornics)
10:10 Discussion (20 Minutes)
 

Epitaxial Graphene on SiC

Co-Chairs: P. Srinivasan and P. V. Kamat
TimeAbs#Title and Authors
10:30   1306   Epitaxial Graphene Growth on SiC Wafers D. K. Gaskill (Naval Research Laboratory), G. Jernigan, P. Campbell (The Naval Research Laboratory), J. L. Tedesco (United States Naval Research Laboratory) and J. Moon (HRL Laboratories)
11:00   1307   Surface Passivation Using Silane for Epitaxial Growth of Graphene on SiC substrate B. Kang (KAIST), S. Lim (National Nano Fab Center (NNFC)) and B. Cho (KAIST)
11:20   1308   3C-SiC Films Grown on Si(111) Substrates as a Template for Graphene Epitaxy. M. Fanton, J. Robinson (The Pennsylvania State University), B. Weiland (Penn State University) and J. Moon (HRL Laboratories)
11:40   1309   Improvement of Morphology and Mobility through Argon-Assisted Growth of Epitaxial Graphene on Silicon Carbide J. L. Tedesco, B. VanMil, R. L. Myers-Ward, J. Culbertson (United States Naval Research Laboratory), P. Campbell, C. Eddy Jr. (The Naval Research Laboratory) and D. K. Gaskill (Naval Research Laboratory)
12:00 Intermission (90 Minutes)
 

Carbon Nanostructures

Co-Chairs: J. Ruzillo and F. D?Souza
TimeAbs#Title and Authors
13:30   1310   Toward Carbon Based Quantum Electronics P. Kim (Columbia University)
14:00   1311   Carbon Nanomaterials Standards Efforts at NIST J. A. Fagan (National Institute of Standards and Technology)
14:30   1312   Synthesis of Diameter and Chirality Controlled CNTs in Zeolites, and their Integration on Wafers J. Van Noyen, F. De Clippel (Center for Surface Science and Catalysis (COK)), D. Lang, X. Ke, G. Van Tendeloo (Electron Microscopy for Materials Science), H. Poelman (Universiteit Gent, Krijgslaan), T. Vosch (Molecular and Nanomaterials), C. Kirschhock, P. Jacobs (Center for Surface Science and Catalysis (COK)) and B. Sels (Katholieke Universiteit Leuven)
15:00   1313   One- and Two-Dimensional Carbon Nanostructures for applications in Microelectronic Devices and Electrochemical Sensors G. Keeley, T. Lutz, N. McEvoy, S. Kumar, M. Schreiber (Trinity College, Dublin), N. Whiteside (Univ. of Wollongong) and G. S. Duesberg (Trinity College Dublin)
15:30 Discussion (20 Minutes)
 

Graphene / High-k Stacks

Co-Chairs: Y. Obeng and S. De-Gendt
TimeAbs#Title and Authors
15:50   1314   Materials Science of Graphene for Novel Device Applications G. Lee (University of Texas at Dallas), C. Gong (UT Dallas), Y. J. Chabal, J. Kim (University of Texas at Dallas), E. M. Vogel (UT Dallas), R. M. Wallace (The University of Texas at Dallas), M. J. Kim (UT Dallas), L. Colombo (Texas Instruments, Inc.) and K. Cho (UT Dallas)
16:20   1315   Performance of High-k Gate Dielectric Graphene Field-effect Devices A. Klekachev, M. Cantoro, A. Nourbakhsh, M. H. Van der Veen, F. Clemente (IMEC vzw), B. Sels (Katholieke Universiteit Leuven), M. Heyns (IMEC) and S. De Gendt (IMEC vzw)
16:40   1316   Production and Chemical Functionalization of Graphene H. Grennberg (Uppsala university)
17:00   1317   In-situ Studies of High-k Dielectrics for Graphene-based Devices A. R. Pirkle (The University of Texas at Dallas), L. Colombo (Texas Instruments, Inc.) and R. M. Wallace (The University of Texas at Dallas)
17:20   1318   Atomic-layer-deposited Al2O3 as Gate Dielectrics for Graphene-based Devices B. Lee, G. Mordi, T. Park (University of Texas at Dallas), K. Cho, E. M. Vogel (UT Dallas), M. Kim (University of Texas at Dallas), L. Colombo (Texas Instruments, Inc.), R. M. Wallace (The University of Texas at Dallas) and J. Kim (University of Texas at Dallas)
 

Grand Ballroom, Building 2

Poster Session - Graphene and Emerging Materials for Post-CMOS Applications

Co-Chairs: Yaw Obeng and D. Misra
TimeAbs#Title and Authors
o   1319   Graphene As A Permeable Ionic Barrier S. Sreevatsa, A. Banerjee and G. Haim (New Jersey Institute of Technology)
 

Wednesday, May 27, 2009

Taylor A/B, 6th Floor, Building 3

FERROELECTRIC PHYSICS / DILUTE MAGNETIC SEMICONDUCTORS

Co-Chairs: P. Srinivasan and D. Misra,
TimeAbs#Title and Authors
08:30   1320   Electrical Field Contol of Ferromagnets and Multiferroics R. Ramesh (University of California)
09:00   1321   Making Semiconductors Magnetic: New Materials Properties, Devices , and Future J. Sinova (Texas A&M University)
09:30   1322   Spintronics and Graphene for Next-Generation of Information Technologies C. Marrows (University of Leeds)
10:00   1323   Emerging Spintronic Devices based on Spin-transfer Torque R. Heindl (National Institute of Standards and Technology (NIST))
10:30 Discussion (30 Minutes)
 

Graphene Composites and Gels

Co-Chairs: H. Iwai, and J. Ruzillo,
TimeAbs#Title and Authors
11:00   1324   Role of 2-D Carbon Support in PEM Fuel Cells. Electrocatalytic Properties of Graphene-Pt Composites B. Seger and P. V. Kamat (University of Notre Dame)
11:30   1325   Novel Spectroscopic Platforms for Bio-Chemical Detection: Graphenated IR Screens A. Banerjee, K. Moeller and H. Grebel (New Jersey Institute of Technology)
11:50   1326   Graphene Aerogels J. Wang and M. Ellsworth (Tyco Electronics)
12:10   1327   Can Graphene be an Electrode Support for Pt in Formic Acid Electrooxidation? S. Murugesan (University of Nevada), K. Myers (Univ. of Nevada) and V. R. Subramanian (University of Nevada)
12:30 Intermission (60 Minutes)
 

Ge / III-V MOSFETS

Co-Chairs: S. De-Gendt and Z. Karim
TimeAbs#Title and Authors
13:30   1328   CMOS Scaling Beyond 22 nm D. Sadana (IBM Research)
14:00   1329   Review of Current Status of III-V MOSFETs I. Thayne (University of Glasgow)
14:30   1330   Energy Efficient Logic Transistor Architecture using Narrow Gap Compound Semiconductors S. Datta (The Pennsylvania State University)
15:00 Discussion (30 Minutes)
 

III-V Process and Simulations

Co-Chairs: P. Srinivasan, D. Misra and Z. Karim
TimeAbs#Title and Authors
15:30   1331   Integration of III-V and Si CMOS Devices by Molecular Beam Epitaxy D. Lubyshev, J. Fastenau and W. K. Liu (IQE Inc.)
16:00   1332   Controlled, Selective III/V Nanowire Heteroepitaxy M. Cantoro, G. Brammertz, M. Leys, S. Degroote (IMEC vzw), M. Heyns (IMEC) and S. De Gendt (IMEC vzw)
16:30   1333   Simulation-Based Study of III-V HEMTs Device Physics for High-Speed Low-Power Logic Applications Y. Liu and M. Lundstrom (Purdue University)
17:00 Discussion (30 Minutes)
 

Thursday, May 28, 2009

Taylor A/B, 6th Floor, Building 3

III-V Devices

Co-Chairs: Z. Karim, and P. V. Kamat
TimeAbs#Title and Authors
08:30   1334   Ge and III-V Channels for Si-based Electronics E. Fitzgerald (MIT)
09:00   1335   Enhancement Mode InGaAs MOSFETs T. Lin, H. Chiu, P. Chang, W. Lee, J. R. Kwo (National Tsing Hua University), W. Tsai (Intel Corporation) and M. Hong (Materials Science, National Tsing Hua University)
09:30   1336   III-V/Ge Channel Engineering for Future CMOS M. Wistey, U. Singisetti, G. Burek, B. J. Thibeault (University of California Santa Barbara), A. Nelson (University of St. Thomas), J. Cagnon, Y. Lee (University of California Santa Barbara), S. R. Bank (University of Texas at Austin), S. Stemmer, A. C. Gossard and M. J. Rodwell (University of California Santa Barbara)
10:00 Discussion (30 Minutes)
 

III-V Interfaces

Co-Chairs: Y. Obeng, S. De-Gendt, P. Srinivasan, D. Misra, H. Iwai, Z. Karim, J. Ruzillo, H. Grebel, P. V. Kamat, and F. D?Souza
TimeAbs#Title and Authors
10:30   1337   Electrical Properties of III-V/oxide Interfaces G. Brammertz, H. Lin (IMEC vzw), K. Martens (IMEC), A. Alian, C. Merckling (IMEC vzw), J. Penaud (Riber), D. Kohen (IMEC vzw), W. Wang (Intel), S. Sioncke, A. Delabie (IMEC vzw), M. R. Caymax, M. Meuris and M. Heyns (IMEC)
11:00   1338   Surface Studies of III-V Materials: Oxidation Control and Device Implications C. Hinkle, M. Milojevic, A. Sonnet, H. Kim, J. Kim (University of Texas at Dallas), E. M. Vogel (UT Dallas) and R. M. Wallace (The University of Texas at Dallas)
11:30 Symposium Concluding Remarks (30 Minutes)